发明名称 Defect correction method for a photomask
摘要 In order to enable the correction of clear defects, opaque defects, and Levenson mask glass projection defects using one species of gas, by changing gas pressure and probe current and scanning conditions of the ion beam 2, the diacetone acrylamide is capable of forming a light-blocking film 17 correcting clear defects on a glass substrate 16 and a chrome pattern 15, is capable of removing chrome and glass at a high etching rate, and is capable of eliminating opaque defect regions 18 and eliminating glass projection defect regions 19. It is therefore possible to carry out correction by changing gas supplying conditions and ion beam irradiation conditions according to whether the correction is clear defect correction, opaque defect correction, or Levenson mask glass projection defect correction.
申请公布号 US2004209172(A1) 申请公布日期 2004.10.21
申请号 US20040809593 申请日期 2004.03.25
申请人 TAKAOKA OSAMU;AITA KAZUO;ARAMAKI FUMIO 发明人 TAKAOKA OSAMU;AITA KAZUO;ARAMAKI FUMIO
分类号 G03F1/08;B44C1/22;C03C17/28;C23F1/00;C23F3/00;G01L21/30;G01R31/00;G03F1/00;G03F1/30;G03F1/68;G03F1/72;G03F1/74;G03F9/00;G06F17/50;H01L21/027;(IPC1-7):G03F9/00 主分类号 G03F1/08
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