Phase exchange memory module, has recovery circuit for selectively applying first write current pulse to phase exchange memory cell to recover amorphous state

摘要

A phase exchange memory module has phase exchange memory cells (Pcelli1) with a volume of material (104) which is programmable between an amorphous and a crystalline state, and a write current source (440) which selectively applies a first write current pulse to program the phase exchange memory cell with the amorphous state and a second write current pulse is applied to program the phase exchange memory cell with the crystalline state. A recovery circuit (420) selectively applies the first write current pulse to the phase exchange memory cell (Pcelli1) to recovery the amorphous state. An independent claim is also included for a program method for phase exchange memory cell.