发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device by which the corrosion or peeling of the external wiring would hardly occur when the external wiring is formed in cut parts of the surface. SOLUTION: The method of manufacturing a semiconductor device comprises a laminate formation process S12 of forming a laminate by fastening a support substrate for covering a region wherein a plurality of integrated circuits are formed on a semiconductor substrate formed with the plurality of integrated circuits via an insulating resin, a notch cutting process S14-2 of cutting the semiconductor substrate together with the insulating resin with at least part of the support substrate being left over, and a dicing process S22 of dividing the laminate into individual pieces by cutting the support substrate. In the notch cutting process S14-2, a dress board 50 is cut by a dicing saw whose teeth have been set before cutting the semiconductor substrate including the laminate by a dicing saw. After checking the cut shape of the dress board 50, the teeth of the dicing saw are set again and then the semiconductor substrate including the laminate is cut by the dicing saw. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004296586(A) 申请公布日期 2004.10.21
申请号 JP20030084392 申请日期 2003.03.26
申请人 SANYO ELECTRIC CO LTD;KANTO SANYO SEMICONDUCTORS CO LTD 发明人 WAKUI MOTOAKI
分类号 H01L23/12;H01L21/301;(IPC1-7):H01L21/301 主分类号 H01L23/12
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