| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming the MTJ cell of a magnetic RAM which is capable of turning the surface structure of a pinned magnetic layer amorphous by applying a physical impact to it. SOLUTION: The method of forming the MTJ cell of the magnetic RAM comprises a step of forming an amorphous layer having a crystal structure of short range order by applying a physical impact on the surface of a pinned magnetic layer having a crystal structure of long range order with ions or neutral ions of high molecular weight, so that a tunneling barrier layer formed in a following process and a free magnetic layer formed on the tunneling barrier layer can be improved in uniformity. COPYRIGHT: (C)2005,JPO&NCIPI
|
