| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser device wherein its reflectance can be controlled stably even when the film thicknesses and the refractive indexes of the dielectric films constituting a reflection film formed in its laser end surface vary, and its desired reflectance in response to its intended use can be realized easily. SOLUTION: A low-reflection film 10 is so formed out of dielectric films 11, 12, 13, 14 having respectively their refractive indexes n1, n2, n3, n4 and so formed in this order from the side of the film 11 contacting with a laser chip that their refractive indexes n1-n4 satisfy the relation of n2=n4≤n1≤n3. Concretely, when using a red semiconductor laser having its wavelengthλ= 660 nm, there are used the dielectric film 11 made of aluminum oxide Al<SB>2</SB>O<SB>3</SB>having its refractive index n1=1.638, the dielectric films 12, 14 made of silicon oxide SiO<SB>2</SB>having their refractive indexes n2=n4=1.489, and the dielectric film 13 made of Ta<SB>2</SB>O<SB>5</SB>having its refractive index n3=2.063. COPYRIGHT: (C)2005,JPO&NCIPI
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