| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which accelerates switching speed without relying on precision of a manufacturing device, and to provide a static protection circuit and a method for manufacturing the semiconductor device. SOLUTION: A MOS transistor 10 comprises a substrate region 12, a first and second impurity regions 14, 16 which are formed in the substrate region 12, a first and second gate conductive layers 22, 24 which are formed on a channel region between the first and the second impurity regions 14, 16 in the substrate region 12 through an insulating film, a first gate wiring layer 26 which is electrically connected to the first gate conductive layer 22, and a second gate wiring layer 28 which is electrically connected to the second gate conductive layer 24. COPYRIGHT: (C)2005,JPO&NCIPI
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