| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for mainly forming the film of a semiconductor device which can form a metal oxide film having a composition near a stoichiometry by a one time film forming step, by hardly capturing an unreacted intermediate product such as carbon (C) or the like in the film without performing an improving step or an oxidizing step of a film quality or the like of a densification or the like as a rear step of the film forming step, and which can form a thin film having a flat surface after the film formation by aligning a crystal size in a film quality manner and finely crystallizing the crystal. SOLUTION: An organic raw material gas containing a metal element and an oxygen radical are introduced into a vacuum container and are reacted, and the metal oxide film is formed on the surface of the substrate disposed in the vacuum container. COPYRIGHT: (C)2005,JPO&NCIPI
|
