发明名称 METHOD OF CLEANING PLASMA TREATMENT DEVICE
摘要 PROBLEM TO BE SOLVED: To efficiently remove a CF film adhering to the treating vessel of a plasma treatment device which forms CF films on, for example, wafers. SOLUTION: At the time of cleaning down a CF film adhering to the inside of the treating vessel after the formation of CF films is performed in the vessel, the CF film adhering to the inside of the treating vessel is decomposed into F and C with oxygen plasma by generating the plasma in the vessel and most of the F and C which are the decomposition products are removed. Then organic matters containing C and O adhering to the inside of the treating vessel are removed by dissolving the organic matters with hydrogen plasma by generating the plasma in the vessel. When this method is used, the inside of the treating vessel 1 can be cleaned certainly while a high cleaning rate is secured, because the CF film and organic matters containing C and O are respectively decomposed efficiently with the oxygen plasma and hydrogen plasma. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004296512(A) 申请公布日期 2004.10.21
申请号 JP20030083293 申请日期 2003.03.25
申请人 TOKYO ELECTRON LTD 发明人 ISHIKAWA HIROSHI;KAWAMURA GOHEI;KOBAYASHI YASUO
分类号 H01L21/3065;H01J37/32;H01L21/31;H01L21/311;(IPC1-7):H01L21/31;H01L21/306 主分类号 H01L21/3065
代理机构 代理人
主权项
地址