METHOD FOR MANUFACTURING TRANSISTOR, TRANSISTOR, ELECTROOPTICAL SUBSTRATE, ELECTROOPTICAL DEVICE, AND ELECTRONIC APPARATUS

摘要

PROBLEM TO BE SOLVED: To manufacture a transistor having a high breakdown voltage in which short circuit of gate electrodes is prevented surely through a simple process. SOLUTION: At first, insulating layers 207 and 208 are formed in a semiconductor substrate 206 using SIMOX method and then the semiconductor substrate 206 is pasted to an insulating substrate 10A. Subsequently, the semiconductor substrate 206 is separated (stripped) from the insulating substrate 10A except a surface layer part including the insulating layers 207 and 208 thus forming a multilayer film of semiconductor films 206c and 206d insulated by the insulating layer 207. One semiconductor film 206c is then patterned to form a semiconductor film becoming an active layer and the other semiconductor film 206d is patterned to form a gate electrode. COPYRIGHT: (C)2005,JPO&NCIPI