发明名称 |
SILICON DIOXIDE THIN FILM, AND ITS PRODUCTION METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide an amorphous silicon dioxide thin film having a low refractive index and physical strength such as high flaw resistance. SOLUTION: The amorphous silicon dioxide thin film is transparent, and comprises many fine voids in the inside. Its refractive index (refractive index of light satisfyingλ=500 nm) lies in the range of 1.01 to 1.40, and the diameter of the fine voids accounting for≥80 vol.% of the whole fine void is≤5 nm. COPYRIGHT: (C)2005,JPO&NCIPI
|
申请公布号 |
JP2004292190(A) |
申请公布日期 |
2004.10.21 |
申请号 |
JP20030083915 |
申请日期 |
2003.03.25 |
申请人 |
UNIV SHINSHU;HIOKI EE CORP |
发明人 |
MURAKAMI YASUSHI;HARANO MASAYUKI;TAKASU YOSHIO;TANIGUCHI MORIO |
分类号 |
C01B33/12;C03C3/06;C03C11/00;(IPC1-7):C01B33/12 |
主分类号 |
C01B33/12 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|