发明名称 SILICON DIOXIDE THIN FILM, AND ITS PRODUCTION METHOD
摘要 PROBLEM TO BE SOLVED: To provide an amorphous silicon dioxide thin film having a low refractive index and physical strength such as high flaw resistance. SOLUTION: The amorphous silicon dioxide thin film is transparent, and comprises many fine voids in the inside. Its refractive index (refractive index of light satisfyingλ=500 nm) lies in the range of 1.01 to 1.40, and the diameter of the fine voids accounting for≥80 vol.% of the whole fine void is≤5 nm. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004292190(A) 申请公布日期 2004.10.21
申请号 JP20030083915 申请日期 2003.03.25
申请人 UNIV SHINSHU;HIOKI EE CORP 发明人 MURAKAMI YASUSHI;HARANO MASAYUKI;TAKASU YOSHIO;TANIGUCHI MORIO
分类号 C01B33/12;C03C3/06;C03C11/00;(IPC1-7):C01B33/12 主分类号 C01B33/12
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