发明名称 |
Method of producing crystalline semiconductor material and method of fabricating semiconductor device |
摘要 |
Disclosed are a method of producing a crystalline semiconductor material capable of improving the crystallinity and a method of fabricating a semiconductor device using the crystalline semiconductor material. An amorphous film is uniformly irradiated with a pulse laser beam (energy beam) emitted from an XeCl excimer laser by 150 times so as to heat the amorphous film at such a temperature as to partially melt crystal grains having the {100} orientations with respect to the vertical direction of a substrate and melt amorphous film or crystal grains having face orientations other than the {100} orientations. Silicon crystals having the {100} orientations newly occur between a silicon oxide film and liquid-phase silicon and are bonded to each other at random, to newly form crystal grains having the {100} orientations. Such a crystal grain creation step is repeated, to form a crystalline film which has crystal grains preferentially grown in the {100} orientations with respect to the vertical direction of the substrate and thereby has sharp square-shaped crystal grain boundaries. |
申请公布号 |
US2004209447(A1) |
申请公布日期 |
2004.10.21 |
申请号 |
US20030645805 |
申请日期 |
2003.08.21 |
申请人 |
GOSAIN DHARAM PAL;MACHIDA AKIO;NAKANO KAZUSHI;FUJINO TOSHIO;SATO JUNICHI |
发明人 |
GOSAIN DHARAM PAL;MACHIDA AKIO;NAKANO KAZUSHI;FUJINO TOSHIO;SATO JUNICHI |
分类号 |
G02F1/1368;C23C14/14;C23C14/34;C23C14/58;C23C16/24;C23C16/26;C23C16/28;C23C16/56;C30B13/00;C30B13/24;G09G3/36;H01L21/20;H01L21/336;H01L29/786;(IPC1-7):H01L21/20;C30B1/00 |
主分类号 |
G02F1/1368 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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