MEMORY CELL INCLUDING SERIAL CIRCUIT OF VARIABLE RESISTIVE ELEMENT AND SCHOTTKY DIODE, MEMORY DEVICE HAVING THE SAME, AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A memory cell including a serial circuit of a variable resistive element and a Schottky diode, a memory device having the same, and a method for fabricating the same are provided to reduce reading errors forming the memory cell with the serial circuit of the variable resistive element and the Schottky diode. CONSTITUTION: A memory cell includes a variable resistive element(31) and a current control element for controlling the current flowing in the variable resistive element. The current control element is a Schottky diode(32). A first electrode of the Schottky diode is a polycrystalline silicon region which is selectively formed by an insulating layer. A second electrode of the Schottky diode is a metal layer which is deposited on the polycrystalline silicon region.