发明名称 |
ETCHING APPARATUS AND METHOD OF SUBSTRATE |
摘要 |
PROBLEM TO BE SOLVED: To provide an etching apparatus to surely realize the etching of only the circumferential edge of a semiconductor wafer. SOLUTION: The etching apparatus comprises a holding and driving mechanism 1 to drive a semiconductor wafer to rotate in the circumferential direction by vertically holding the wafer, and an etching vessel 21 to contain etchant and etch the circumferential edge of the semiconductor wafer to be driven to rotate with the holding and driving mechanism by soaking the wafer into the etchant. COPYRIGHT: (C)2005,JPO&NCIPI
|
申请公布号 |
JP2004296810(A) |
申请公布日期 |
2004.10.21 |
申请号 |
JP20030087551 |
申请日期 |
2003.03.27 |
申请人 |
SHIBAURA MECHATRONICS CORP |
发明人 |
KUROKAWA SADAAKI;YAMAMOTO RIYOUJI |
分类号 |
H01L21/306;(IPC1-7):H01L21/306 |
主分类号 |
H01L21/306 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|