发明名称 |
ION BEAM SPUTTERING SYSTEM |
摘要 |
PROBLEM TO BE SOLVED: To improve a deposition speed without increasing the current density of an ion beam. SOLUTION: The ion beam sputtering system performs deposition on a substrate 14 by the particles jumped out of a target 21 by irradiating the target 21 with the ion beam 17, in which the shape of the sputtered surface 21a of the target 21 is formed as a recessed surface shape. A distribution range 22 of the scattered particles converge more than the conventional target formed as a flat surface on its surface and therefore the scattered particles can be effectively stuck onto the substrate 14. COPYRIGHT: (C)2005,JPO&NCIPI
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申请公布号 |
JP2004292871(A) |
申请公布日期 |
2004.10.21 |
申请号 |
JP20030085517 |
申请日期 |
2003.03.26 |
申请人 |
JAPAN AVIATION ELECTRONICS INDUSTRY LTD |
发明人 |
WATANABE KOJI;SUZUKI KAZUO;ITO KAZUHIKO;KAMEDA KENJI;URANO YASUNORI;NAKASHIO KOICHI |
分类号 |
C23C14/46;C23C14/34;(IPC1-7):C23C14/46 |
主分类号 |
C23C14/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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