发明名称 ION BEAM SPUTTERING SYSTEM
摘要 PROBLEM TO BE SOLVED: To improve a deposition speed without increasing the current density of an ion beam. SOLUTION: The ion beam sputtering system performs deposition on a substrate 14 by the particles jumped out of a target 21 by irradiating the target 21 with the ion beam 17, in which the shape of the sputtered surface 21a of the target 21 is formed as a recessed surface shape. A distribution range 22 of the scattered particles converge more than the conventional target formed as a flat surface on its surface and therefore the scattered particles can be effectively stuck onto the substrate 14. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004292871(A) 申请公布日期 2004.10.21
申请号 JP20030085517 申请日期 2003.03.26
申请人 JAPAN AVIATION ELECTRONICS INDUSTRY LTD 发明人 WATANABE KOJI;SUZUKI KAZUO;ITO KAZUHIKO;KAMEDA KENJI;URANO YASUNORI;NAKASHIO KOICHI
分类号 C23C14/46;C23C14/34;(IPC1-7):C23C14/46 主分类号 C23C14/46
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