| 摘要 |
PROBLEM TO BE SOLVED: To provide a film-forming composition which forms a porous film or an interlayer insulating film having a dielectric constant of≤2.0 and practical physical strengths through an easy step at a low cost, a method for forming the porous film, the porous film formed using the same, and a high-performance, high-reliability semiconductor device wherein the porous film is installed. SOLUTION: The composition for forming the porous film contains (A) 100 pts.wt. silanol group-containing silicone resin and (B) 10-200 pts.wt. acrylic polymer having a degree of dispersion of≤2.0 and a number average molecular weight of≤10,000. Here, (A) the silanol group-containing silicone resin has a number average molecular weight of≥100 and contains≥30 mol% structural unit (unit T) of the formula: R<SP>1</SP>-SiZ<SB>3</SB>(wherein R<SP>1</SP>is a (non)substituted monovalent hydrocarbon group; and Z is chosen from an OH group, a hydrolyzable group and a siloxane residue, provided that at least one of Z is a siloxane residue) and≥10 mol% silanol group against silicon atom. The composition can form the porous film which is smooth and homogeneous, has a low dielectric constant and large mechanical strengths and is optimally used as the interlayer insulating film when manufacturing the semiconductor device. COPYRIGHT: (C)2005,JPO&NCIPI
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