| 摘要 |
A memory device comprising an array of bits or binary units (2), the bits (2) being defined by a plurality of first conductors (4) and either a second conductor or a plurality of second conductors (5) overlying and separated from the first conductors, each bit (2) including a cross-over point (9) between one of the first conductors (4) and the second conductor (5), or one of the second conductors (5), and wherein a selection of the bits (2) also include a signal bridge connecting the first (4) and second (5) conductors at each of the respective selected pixels. |
