| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a surface acoustic wave device and a surface acoustic wave device of which thickness is reduced, and which can be made with ease. <P>SOLUTION: In the method for manufacturing the surface acoustic wave device, a piezoelectric substrate 11A and a silicon substrate 12A are laminated, and then each substrate is cut/polished as thin as possible but is thick enough not to cause chap or crack. By doing so, the silicon substrate 12A (and a silicon substrate 12B, too) prevents the piezoelectric substrate 11A (as well as a piezoelectric substrate 11B) from thermal expansion and change of a constant number, and as the bonded substrate formed with the two substrates (11A and 12A/11B and 12B) is reinforced, the cut/polished bonded substrate can be thinner than the substrate formed only with the piezoelectric substrate. For example, the method includes steps such as cutting/polishing the piezoelectric substrate 11A to form the piezoelectric substrate 11B of about some tens micrometers to 100 micrometers (as shown in Fig.(b)), and cutting/polishing the silicon substrate 12A to form the silicon substrate 12B of about some tens micrometers to 100 micrometers (as shown in Fig.(c)). <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
