| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an ultrasonic bonding method capable of forming sufficient connection even when applied power of ultrasonic vibration is decreased. <P>SOLUTION: In the ultrasonic bonding method wherein an ultrasonic wave is applied to a semiconductor element while increasing the weight applied to the semiconductor element so that wiring electrodes provided to a heated resin board press connection electrodes of the semiconductor element thereby bonding the connection electrodes and the wiring electrodes with each other, when 5 to 70% of the maximum weight is applied to the semiconductor element, application of the ultrasonic wave vibration to the semiconductor element is started, and after or as soon as the application of the ultrasonic wave vibration is stopped, the maximum weight is applied to the semiconductor element, the resin board in the heating state having an elastic modulus of greater than 18GPa. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
