| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light emitting diode in which a process for stopping back emission of a pad electrode is simplified without causing any strain in a chip. <P>SOLUTION: On the surface of the top semiconductor layer of a chip in the light emitting diode, ohmic junction is employed between a pad electrode and a mesh-like linear electrode covering the surface not occupied by the pad electrode and between the linear electrode and the top semiconductor layer. Schottky junction is employed between the pad electrode and the top semiconductor layer using a metal as the pad electrode and an n-type semiconductor as the top semiconductor layer. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
