发明名称 PLASMA TREATMENT APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a plasma processing apparatus for obtaining a substrate treating or to be treated having less contamination by protecting a metallic member such as a lower case or a cover forming a part of a chamber of a plasma treatment reaction chamber, i.e. a vacuum container, from plasma. SOLUTION: The plasma treatment apparatus applies plasma treatment to a substrate 6 to be treated in a chamber (vacuum container 10) having a metallic chamber wall (such as the lower container 1, the cover 7 frame) as at lease one part. In this apparatus, at least an insulating protective member 8 is provided on the side of a vacuum seal surface between the metallic chamber wall (such as the lower container 1, cover 7 frame) and the other chamber wall (such as a upper container 2). COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004296460(A) 申请公布日期 2004.10.21
申请号 JP20030082596 申请日期 2003.03.25
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 SATO TAKAYUKI
分类号 C23C16/44;H01L21/3065;H01L21/31;(IPC1-7):H01L21/306 主分类号 C23C16/44
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