发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR LASER, AND METHOD FOR MANUFACTURING INTEGRATED OPTICAL CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor laser which can be formed integrally with a waveguide formed in two-dimensional photonic crystal, and a method for manufacturing an integrated optical circuit which can manufacture an optical module for wavelength multiplexing transmission at a low cost. SOLUTION: The waveguide formed in two-dimensional photonic crystal and the semiconductor laser which can be formed integrally are constituted of 101-an n-type GaAs substrate, 102-an n-type AlGaAs cladding layer of an active part, 105-a GaInNAs/GaAs active layer, 106-a p-type AlGaAs cladding layer of the active part, 107-a p-type GaAs electrode contact layer, 108-a p-side electrode, 109-an n-side electrode, 112-a GaAs core layer of a reflector, 113-a pit (air) which constitutes quadratic former photograph nick glacial, and 114-an Al<SB>2</SB>O<SB>3</SB>cladding layer of a reflector. Since a current injection type semiconductor laser which emits light to an inward direction of two-dimensional photonic crystal can be formed, integral constitution with the waveguide formed in the two-dimensional photonic crystal is enabled. Plural number of the lasers are formed in an integrated optical circuit using the two-dimensional photonic crystal, and waveguides which carry out optical coupling are made to join mutually. As a result, the optical module for wavelength multiplexing transmission and a wavelength multiplexing optical transmission system can be obtained at a low cost. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004296560(A) 申请公布日期 2004.10.21
申请号 JP20030084096 申请日期 2003.03.26
申请人 HITACHI LTD 发明人 KONDO MASAHIKO;HOSOMI KAZUHIKO;FUKAMACHI TOSHIHIKO
分类号 G02B6/122;G02B6/12;H01S5/026;H01S5/12;(IPC1-7):H01S5/12 主分类号 G02B6/122
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