Method of etching metals with high selectivity to hafnium-based dielectric materials

摘要

A method of plasma etching a metal layer (e.g., titanium (Ti), tantalum (Ta), tungsten (W), and the like) or a metal-containing layer (e.g., tantalum silicon nitride (TaSiN), titanium nitride (TiN), tungsten nitride (WN), and the like) formed on a hafnium-based dielectric material is disclosed. The metal/metal-containing layer is etched using a gas mixture comprising a halogen-containing gas and a fluorine-containing gas. The fluorine within the gas mixture provides a high etch selectivity for the hafnium-based dielectric material.