COMPOSITION FOR FORMING POROUS FILM, MANUFACTURING METHOD OF POROUS FILM, POROUS FILM, INTERLAYER INSULATING FILM AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a coating liquid for forming a porous film which can easily form a thin film having an arbitrarily controlled thickness by a method used in an usual semiconductor process and gives a porous film exhibiting excellent dielectric characteristics and mechanical characteristics.

SOLUTION: The coating liquid comprises a condensate obtained by condensing in the presence of an acid at least one compound selected from a silicic acid compound represented by the general formula: (X2O)i(SiO2)j(H2O)kand an organosilicic acid compound represented by the general formula: (X2O)a(RSiO1.5)b(H2O)cand permits the manufacture of a porous insulating film having mechanical strengths and dielectric characteristics applicable to a semiconductor manufacturing process.

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