| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a process for fabricating a semiconductor light emitting element in which the surface roughening process of a nitride semiconductor is simplified, cracking of the element is avoided and good uniformity is attained. <P>SOLUTION: The process for fabricating a semiconductor light emitting element comprises a step for forming a one conductivity type nitride semiconductor layer, a light emitting layer and a reverse conductivity type nitride semiconductor layer sequentially on one major surface of a conductive single crystal substrate having a hexagonal system crystal structure and then forming one electrode on the reverse conductivity type nitride semiconductor layer, a step for forming the other electrode on the rear surface of the single crystal substrate, and a step for roughening the rear surface of the single crystal substrate by wet etching. Such problems as a long processing time is required for etching, e.g. RIE or ion milling, grinding, and the like, and a fabricated nitride semiconductor light emitting element is cracked by a residual stress caused by difference of lattice constant and thermal expansion coefficient between a different type of substrate and a nitride semiconductor at the time of machining can be solved when the light take-out surface of the element is roughened, e.g. when protrusions and recesses are made thereon. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
