| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a nonvolatile memory transistor consuming less electric power than before and its manufacturing method. SOLUTION: The semiconductor device includes a semiconductor layer 10, a first insulating layer 20 provided on the semiconductor layer 10, a floating gate 22 provided on the first insulating layer 20, a second insulating layer 24 provided on the floating gate 22, a control gate 26 provided on the second insulating layer 24, a source region 14 and a drain region 16 which are arranged on the semiconductor layer 10 on the sides of the floating gate 22 and a channel region formed between the source region 14 and the drain region 16. The semiconductor device has the nonvolatile memory transistor 100 in which Schottky junctions are formed on the boundary between the channel region and the source region 14 and on the boundary between the channel region and the drain region 16. COPYRIGHT: (C)2005,JPO&NCIPI
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