METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, LASER IRRADIATION METHOD, AND LASER IRRADIATION DEVICE

摘要

PROBLEM TO BE SOLVED: To solve the problem wherein a semiconductor device having high characteristics can be expected when a semiconductor film is subjected to annealing by using a continuous oscillation laser, but when the semiconductor film is scanned with a beam having an elliptical shape in cross section, the area ratio of a region of bad crystallinity to the whole film becomes high and causes a trouble when increasing the integration of the semiconductor device. SOLUTION: The semiconductor film as an object of irradiation is irradiated with harmonic waves emitted from a continuous oscillation laser and fundamental waves of wavelength 1μm or so in an auxiliary manner at the same time. A region of the semiconductor film which is less given the energy of the harmonic waves is more given the energy of fundamental waves, and the other region of the semiconductor film which is more given the energy of the harmonic waves is less given the energy of fundamental waves. By this setup, a long crystal grain region can be formed in the semiconductor film restraining a region of bad crystallinity from being formed. COPYRIGHT: (C)2005,JPO&NCIPI