发明名称 |
ZINC OXIDE FILM MANUFACTURING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a zinc oxide film manufacturing method capable of controlling the electron density. SOLUTION: A zinc oxide film is manufactured in a film deposition chamber by depositing zinc oxide on a material for film deposition by using group three elements or oxides thereof as a dopant. The predetermined electron density is obtained by adjusting the partial pressure of oxygen on the basis of the relationship between the pre-grasped electron density of the zinc oxide film and the partial pressure of oxygen in the film deposition chamber. The partial pressure of oxygen is adjusted on the basis of the negative correlation formula between the electron density and the partial pressure of oxygen in a predetermined electron density range of≥8×10<SP>20</SP>/cm<SP>3</SP>. COPYRIGHT: (C)2005,JPO&NCIPI
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申请公布号 |
JP2004292839(A) |
申请公布日期 |
2004.10.21 |
申请号 |
JP20030083050 |
申请日期 |
2003.03.25 |
申请人 |
SUMITOMO HEAVY IND LTD |
发明人 |
YAMAMOTO TETSUYA;SAKAMI TOSHIYUKI;SHIRAKATA SHO |
分类号 |
C03C17/245;C23C14/08;C23C14/32;(IPC1-7):C23C14/08 |
主分类号 |
C03C17/245 |
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