发明名称 |
METHOD TO DEPOSIT AN IMPERMEABLE FILM ONTO A POROUS LOW-K DIELECTRIC FILM |
摘要 |
A method for improving the adhesion of an impermeable film on a device such as porous low-k dielectric film in an interconnect structure is disclosed. The method provides an in-situ annealing step before the deposition of the impermeable film to release the volatile trapped or adsorbed molecules such as water, alcohol, HCl, HF vapor, of the porous low-k dielectric film. The method also provides in-situ deposition of the impermeable film following the deposition of the porous low dielectric film without exposure to an atmosphere containing trappable molecules. The method further provides in-situ deposition of the impermeable film following the removal a portion of the porous low-k dielectric film without exposure to an atmosphere containing trappable molecules |
申请公布号 |
WO2004070794(A3) |
申请公布日期 |
2004.10.21 |
申请号 |
WO2004US03188 |
申请日期 |
2004.02.04 |
申请人 |
TEGAL CORPORATION;ZHANG, ZHIHONG;NGUYEN, TAI, DUNG;NGUYEN, TUE |
发明人 |
ZHANG, ZHIHONG;NGUYEN, TAI, DUNG;NGUYEN, TUE |
分类号 |
H01L21/285;H01L21/316;H01L21/318;H01L21/768 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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