发明名称 METHOD TO DEPOSIT AN IMPERMEABLE FILM ONTO A POROUS LOW-K DIELECTRIC FILM
摘要 A method for improving the adhesion of an impermeable film on a device such as porous low-k dielectric film in an interconnect structure is disclosed. The method provides an in-situ annealing step before the deposition of the impermeable film to release the volatile trapped or adsorbed molecules such as water, alcohol, HCl, HF vapor, of the porous low-k dielectric film. The method also provides in-situ deposition of the impermeable film following the deposition of the porous low dielectric film without exposure to an atmosphere containing trappable molecules. The method further provides in-situ deposition of the impermeable film following the removal a portion of the porous low-k dielectric film without exposure to an atmosphere containing trappable molecules
申请公布号 WO2004070794(A3) 申请公布日期 2004.10.21
申请号 WO2004US03188 申请日期 2004.02.04
申请人 TEGAL CORPORATION;ZHANG, ZHIHONG;NGUYEN, TAI, DUNG;NGUYEN, TUE 发明人 ZHANG, ZHIHONG;NGUYEN, TAI, DUNG;NGUYEN, TUE
分类号 H01L21/285;H01L21/316;H01L21/318;H01L21/768 主分类号 H01L21/285
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