PATTERN FORMING METHOD AND ELECTRIC ELEMENT FABRICATING METHOD USING THE SAME

摘要

PURPOSE: A pattern forming method and an electric element fabricating method using the same are provided to crystallize a part of amorphous state ITO(Indium Tin Oxide), form a crystallization state ITO layer, and form a pattern of an etching object layer by the etching selection rate difference of the amorphous state and the crystallization state. CONSTITUTION: An etching object layer is formed on a substrate(101). An amorphous state ITO layer is formed on the etching object layer. A partial region of the amorphous state ITO layer is crystallized. The amorphous state ITO layer is etched to form a crystallized ITO pattern(110a). The etching object layer is etched in a state in which the etching object layer is blocked by the crystallized ITO pattern.