NPN TRANSISTOR AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide an NPN transistor and its manufacturing method which can be intended to remove influences of a cross-contamination and curtail a production cost. SOLUTION: The NPN transistor comprises a semiconductor substrate 1 in which a P+type region 1b obtained by doping acceptor impurities at a high density and a P-type region 1 obtained by doping them at a low density are formed on a P type base material. An N+type embedded layer 2 and a P type isolated region 3 for isolation outside thereof are formed on this semiconductor substrate 1, respectively, and also an N type island region 5a is formed in an interior enclosed with the semiconductor substrate 1 and the P type isolated region 3. Each of regions 7, 8, 9 for constituting a transistor are formed in this N type island region 5a. COPYRIGHT: (C)2005,JPO&NCIPI