| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a highly reliable via connection by preventing an open defect of vias connected to a capacitor, and to provide a manufacturing method thereof. SOLUTION: At least a first aluminum wiring 171 is formed on an interlayer insulating film 16 covering a capacitor element C1. The wiring 171 is connected to both ends of a polysilicon layer 151 and a polysilicon layer 152 and to an n-type diffusion layer 132 through via holes 181-184 formed on the film 16. The layer 152 forms a fuse F1. The layer 132 is diode-connected to a substrate 11 to form a diode region D1. At least a second aluminum wiring 172 to be connected to the wiring 171 is formed on an interlayer insulating film 19 through a via hole 201. COPYRIGHT: (C)2005,JPO&NCIPI
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