发明名称 |
Deposition of carbon-and transition metal-containing thin films |
摘要 |
A process and system for depositing a carbon- and transition metal-containing thin film on a substrate involves placing a substrate within a reaction space and sequentially pulsing into the reaction space a transition metal chemical and an organometallic chemical. Following each chemical pulse, the reaction space is purged, and the pulse and purge sequence is repeated until a desired film thickness is obtained. A preferred deposition process uses atomic layer deposition techniques and may result in an electrically conductive thin carbide film having uniform thickness over a large substrate area and excellent adhesion and step coverage properties.
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申请公布号 |
US2004208994(A1) |
申请公布日期 |
2004.10.21 |
申请号 |
US20030642426 |
申请日期 |
2003.08.15 |
申请人 |
PLANAR SYSTEMS, INC. |
发明人 |
HARKONEN KARI;DOCZY MARK;LANG TEEMU;BAXTER NATHAN E. |
分类号 |
C23C16/32;C23C16/44;C23C16/455;(IPC1-7):B32B9/00 |
主分类号 |
C23C16/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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