VERTICAL FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide a vertical field effect transistor having a gate electrode only in a silicon germanium region becoming a channel layer 12 by using a vertical field effect transistor in a new structure, and to provide the manufacturing method of the transistor. SOLUTION: In the vertical field effect transistor where electrically charged particles of the channel layer 12 travel in the vertical direction of a substrate, the channel layer 12 is formed of alloy of silicon and germanium, and undoped single crystal silicons 21 are arranged only on side walls of the channel layer 12. Thus, the vertical field effect transistor can be obtained which has a characteristic as designed and realizes integration. COPYRIGHT: (C)2005,JPO&NCIPI