发明名称 |
Method for making Group III nitride devices and devices produced thereby |
摘要 |
A method is for making at least one semiconductor device including providing a sacrificial growth substrate of Lithium Aluminate (LiAlO2); forming at least one semiconductor layer including a Group III nitride adjacent the sacrificial growth substrate; attaching a mounting substrate adjacent the at least one semiconductor layer opposite the sacrificial growth substrate; and removing the sacrificial growth substrate. The method may further include adding at least one contact onto a surface of the at least one semiconductor layer opposite the mounting substrate, and dividing the mounting substrate and at least one semiconductor layer into a plurality of individual semiconductor devices. To make the final devices, the method may further include bonding the mounting substrate of each individual semiconductor device to a heat sink. The step of removing the sacrificial substrate may include wet etching the sacrificial growth substrate.
|
申请公布号 |
US2004209402(A1) |
申请公布日期 |
2004.10.21 |
申请号 |
US20040803467 |
申请日期 |
2004.03.18 |
申请人 |
CRYSTAL PHOTONICS INC |
发明人 |
CHAI BRUCE H T;GALLAGHER JOHN JOSEPH;HILL DAVID WAYNE |
分类号 |
C30B25/02;C30B25/18;C30B29/60;H01L21/20;H01L21/205;H01L33/00;(IPC1-7):H01L33/00 |
主分类号 |
C30B25/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|