Ion implantation in channel region of CMOS device for enhanced carrier mobility

摘要

An integrated circuit (IC) includes a CMOS device with a channel region that has ions implanted therein. The IC preferably incorporates sub-0.1 micron technology in the CMOS device. The implanted ions may preferably be germanium ions. The ion-implanted channel region preferably has a carrier mobility that is greater than that for a region that is not implanted with the ions.