发明名称 Semiconductor optical device and method for manufacturing the same
摘要 A method for manufacturing a semiconductor optical device includes forming an epitaxial structure containing at least an active layer which can emit light, of a III-V group semiconductor material; forming an insulating layer over the epitaxial structure, which prevents the V group element from escaping from the epitaxial structure during heat treatment; heat treating the epitaxial structure at at least 800 degrees C.; and removing the insulating layer, thereby enhancing the reliability of the device.
申请公布号 US2004208214(A1) 申请公布日期 2004.10.21
申请号 US20040803956 申请日期 2004.03.19
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 KAWASAKI KAZUSHIGE;SHIGIHARA KIMIO
分类号 H01S5/028;B82Y20/00;H01L21/00;H01L21/324;H01S5/00;H01S5/02;H01S5/22;H01S5/223;H01S5/343;(IPC1-7):H01L21/00 主分类号 H01S5/028
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