发明名称 |
Low capacitance coupling wire bonded semiconductor device |
摘要 |
A semiconductor device having reduced self and mutual capacitance of bonded wires is provided by coating the wires with a foamed polymer effectively having a very low dielectric constant. Additional benefits are realized by electrically insulating the wires against short-circuiting, by cushioning the wires with a low modulus sheath, and by protecting chip bond pad metallization. |
申请公布号 |
US2004207096(A1) |
申请公布日期 |
2004.10.21 |
申请号 |
US20040836949 |
申请日期 |
2004.05.03 |
申请人 |
LAMSON MICHAEL A.;KLONIS HOMER B. |
发明人 |
LAMSON MICHAEL A.;KLONIS HOMER B. |
分类号 |
H01L21/60;H01L21/56;H01L23/49;H01L23/495;H01L23/64;(IPC1-7):H01L23/48 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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