发明名称 Low capacitance coupling wire bonded semiconductor device
摘要 A semiconductor device having reduced self and mutual capacitance of bonded wires is provided by coating the wires with a foamed polymer effectively having a very low dielectric constant. Additional benefits are realized by electrically insulating the wires against short-circuiting, by cushioning the wires with a low modulus sheath, and by protecting chip bond pad metallization.
申请公布号 US2004207096(A1) 申请公布日期 2004.10.21
申请号 US20040836949 申请日期 2004.05.03
申请人 LAMSON MICHAEL A.;KLONIS HOMER B. 发明人 LAMSON MICHAEL A.;KLONIS HOMER B.
分类号 H01L21/60;H01L21/56;H01L23/49;H01L23/495;H01L23/64;(IPC1-7):H01L23/48 主分类号 H01L21/60
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