发明名称 |
METHOD OF MANUFACTURING POTASSIUM NIOBATE SINGLE CRYSTAL THIN FILM, SURFACE ACOUSTIC WAVE ELEMENT, FREQUENCY FILTER, FREQUENCY OSCILLATOR, ELECTRONIC CIRCUIT AND ELECTRONIC APPLIANCE |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a KNbO<SB>3</SB>single crystal thin film by which a rhombic KNbO<SB>3</SB>single crystal thin film is epitaxially grown at a high deposition rate at a temperature near room temperature on various kinds of single crystal substrates, a surface acoustic wave element which has high k<SP>2</SP>and is frequency-band-widened , is small-sized and is excellently power-saved by providing the thin film obtained by the method, a frequency filter, a frequency oscillator, an electronic circuit and an electronic appliance. <P>SOLUTION: The method of manufacturing the KNbO<SB>3</SB>single crystal thin film comprises a coating process for coating an SrTiO<SB>3</SB>single crystal substrate 11 with liquid drops of an aqueous solution containing KNbO<SB>3</SB>by a liquid drop discharge method and a deposition process for depositing the potassium niobate single crystal layer 12 from the applied liquid drops by epitaxial growth. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
申请公布号 |
JP2004292226(A) |
申请公布日期 |
2004.10.21 |
申请号 |
JP20030085761 |
申请日期 |
2003.03.26 |
申请人 |
SEIKO EPSON CORP |
发明人 |
HIGUCHI AMAMITSU;MORII KATSUYUKI;IWASHITA SETSUYA;MIYAZAWA HIROSHI |
分类号 |
B01D9/02;C30B7/04;C30B19/00;C30B19/12;C30B29/30;H03H3/08;H03H9/02 |
主分类号 |
B01D9/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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