| 摘要 |
PROBLEM TO BE SOLVED: To prevent shorting between the wirings, which becomes the problem when a metal film is flattened by a polishing method in a CMP method. SOLUTION: A method includes a process for forming an interlayer insulating film 13 on a substrate 11 where a semiconductor element and the wiring 12 of a lower layer are formed, and for flattening it in chemical/mechanical polishing; a process for forming a connection hole 15 to wiring 12 of the lower layer in the interlayer insulating film 13; a process for depositing the metal film 16 in the connection hole 15 and on the interlayer insulating film 13, and removing the metal film protruded from the connection hole 15 by chemical/mechanical polishing; and a process for forming wiring 18 of an upper layer on the metal film 16 embedded in the connection hole 15. When wiring 18 of the upper layer is formed, the metal thin piece 17 generated on the interlayer insulating film 13 is removed by chemical/mechanical polishing of the metal film 16. The metal thin piece 17 existing between wirings 18 can effectively be removed without excessively damaging the wirings 18 and the interlayer insulating film 13. COPYRIGHT: (C)2005,JPO&NCIPI
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