| 摘要 |
PROBLEM TO BE SOLVED: To provide a method by which the operation stopping duration of a semiconductor manufacturing device for temperature measurement can be shortened, which can make the temperature measurement at the time of forming a metal film for wiring, and by which the in-plane temperature of a wafer can be measured at multiple points. SOLUTION: A damage layer 10 is formed by injecting an impurity into an Si wafer 6 by performing ion implantation. Since the damage layer 10 recovers damage in accordance with the quantity of heat received by the Si wafer 6, the quantity of the recovered damage is measured. Consequently, the temperature of the wafer is analyzed by using preacquired correlative characteristics between the quantity of damage and heat-treating temperatures. COPYRIGHT: (C)2005,JPO&NCIPI
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