| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which is capable of selectively etching a high dielectric constant insulating film on an SiO<SB>2</SB>film on the ground. SOLUTION: Polycrystalline silicon film patterns 103, 104 as a silicon seed supply source are provided on the high dielectric constant insulating film 107, and the patterns 103, 104 are etched when etching the film 107, thereby supplying a silicon seed S<SB>1</SB>into an etching atmosphere. The patterns 103, 104 are equivalent to a dummy gate electrode, and are formed via the film 107 on an element isolation regions 101, 102 formed on a semiconductor substrate 100. Also, a polycrystalline silicon film pattern 109 as a gate electrode 109 may be used as the silicon seed supplying source. COPYRIGHT: (C)2005,JPO&NCIPI
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