发明名称 |
Method for preparing a bonding surface of a semiconductor layer of a wafer |
摘要 |
A method for preparing a bonding surface of a semiconductor layer of a wafer is described. The method includes treating the bonding surface to oxidize contaminants, and then cleaning the bonding surface to remove essentially all remaining contaminants. Ozone is then used to oxidize the bonding surface to improve the hydrophilic properties of the bonding surface. In an implementation, two wafers are prepared and then bonded together to form a structure.
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申请公布号 |
US2004209441(A1) |
申请公布日期 |
2004.10.21 |
申请号 |
US20040808288 |
申请日期 |
2004.03.25 |
申请人 |
MALEVILLE CHRISTOPHE;MAUNAND TUSSOT CORINNE |
发明人 |
MALEVILLE CHRISTOPHE;MAUNAND TUSSOT CORINNE |
分类号 |
B08B3/12;H01L21/306;(IPC1-7):H01L21/30 |
主分类号 |
B08B3/12 |
代理机构 |
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主权项 |
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地址 |
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