发明名称 Charged particle beam exposure apparatus and exposure method
摘要 A charged particle beam exposure apparatus comprises a beam gun, a projection optics, a sample stage loaded with a sample wherein an image projected from the projection optics is to be formed, first marks are formed beforehand, and second marks are exposed to a charged particle beam with a first incident energy by the projection optics in the vicinity of the first marks, a detector detecting an electron signal from a region including the first and second marks, when the region is scanned with a second incident energy different from the first incident energy, a calculation circuit calculating a positional shift between the first and second marks from the detected signal, a correction circuit correcting a position of the first mark based on the calculated positional shift, and an exposure control circuit aligning a desired pattern based on the corrected position of the first mark.
申请公布号 US2004206918(A1) 申请公布日期 2004.10.21
申请号 US20040843431 申请日期 2004.05.12
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 NAKASUGI TETSURO
分类号 H01J37/304;(IPC1-7):H01J37/304 主分类号 H01J37/304
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