发明名称 |
Laser irradiation apparatus, laser irradiation method, and method for manufacturing a semiconductor device |
摘要 |
YAG laser can simultaneously emit a plurality of laser beams having different wavelengths from each other. By simultaneously irradiating the laser beams having different wavelengths from each other to a same region of a non-single crystal semiconductor film, an interference influence is suppressed to obtain a more uniform laser beam. For example, by simultaneously generating second and third harmonics of YAG laser to irradiate the same region through suitable optical system, a laser beam having higher uniformity and having an energy in which interference is highly suppressed is obtained. |
申请公布号 |
US2004208206(A1) |
申请公布日期 |
2004.10.21 |
申请号 |
US20040756776 |
申请日期 |
2004.01.14 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
TANAKA KOICHIRO |
分类号 |
B23K26/00;B23K26/06;B23K26/067;B23K26/073;B23K26/08;B23K26/18;H01L21/20;H01L21/268;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/786;(IPC1-7):H01S3/10 |
主分类号 |
B23K26/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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