| 摘要 |
<p>A base film for semiconductor wafer processing is disclosed which mainly contains polyethylene-2,6-naphthalene dicarboxylate, exhibits excellent dimensional stability, smoothness, mechanical strength under high temperature, high humidity conditions, and has an excellent processing aptitude. This base film for semiconductor wafer processing is a biaxially oriented film mainly containing polyethylene-2,6-naphthalene dicarboxylate. The thermal shrinkage rate of this base film when heat-treated at 200˚C for 10 minutes is not more than 1.00% in both the film-forming direction and the width direction.</p> |
