| 摘要 |
PROBLEM TO BE SOLVED: To restrain an unwritten transistor from varying in V<SB>t</SB>when high-temperature consecutive readouts are carried out. SOLUTION: A control gate 5 is formed of a first polysilicon film, a floating gate 9 is formed of a second polysilicon film, and the floating gate 9 is arranged on the control gate 5 for the formation of a so-called EPROM of two-layered poly structure. An Al wiring layer 18 which is arranged on an interlayer insulating film 14 and electrically connected to the control gate 5 is so shaped as to cover the floating gate 9 and the etching residue 10 of the second polysilicon present on the side of the control gate 5. Or, the Al wiring layer 18 is so shaped as to surround the floating gate 9 and cover the etching residue 10. COPYRIGHT: (C)2005,JPO&NCIPI
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