发明名称 |
Apparatus and method for pulling single crystal |
摘要 |
The present invention teaches an apparatus for pulling a single crystal, whereby the radial temperature gradient of a seed crystal and/or a neck is reduced to a minimum so as to inhibit the occurrence of thermal stress and prevent induction of dislocations, resulting in an improvement in dislocation-free rate of single crystals to be pulled in cases where a single crystal is pulled with the seed crystal and/or the neck being heated using an auxiliary heating device, comprising a crucible charged with a melt, a heater located around the crucible and an auxiliary heating device including a heating section which can be located so as to surround a seed crystal in a position near above the melt and a transfer mechanism for withdrawing the heating section from a passing area of a single crystal, wherein a covering section to cover a clearance between the heating section and the seed crystal is extended from the heating section.
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申请公布号 |
US2004206301(A1) |
申请公布日期 |
2004.10.21 |
申请号 |
US20040820885 |
申请日期 |
2004.04.09 |
申请人 |
WATANABE HIDEKI;MIYAMOTO ISAMU;FUJIWARA TOSHIYUKI;INAMI SHUICHI |
发明人 |
WATANABE HIDEKI;MIYAMOTO ISAMU;FUJIWARA TOSHIYUKI;INAMI SHUICHI |
分类号 |
C30B15/14;(IPC1-7):C30B15/00;C30B21/06;C30B27/02;C30B28/10;C30B30/04 |
主分类号 |
C30B15/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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