发明名称 |
Novel multi-level (4state/2-bit) stacked gate flash memory cell |
摘要 |
A method is provided for forming a highly dense stacked gate flash memory cell with a structure having multi floating gates that can assume 4 states and, therefore, store 2 bits at the same time. This is accomplished by providing a semiconductor substrate having gate oxide formed thereon, and shallow trench isolation and a p-well formed therein. A layer of nitride is next formed over the substrate and an opening formed therein. Polysilicon floating gate spacers are formed in the opening. A dielectric layer is then formed over the floating gates followed by the forming of a control gate. The adjacent nitride layer is then removed leaving a multi-level structure comprising a control gate therebetween multi floating gates with the intervening dielectric layer.
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申请公布号 |
US2004207007(A1) |
申请公布日期 |
2004.10.21 |
申请号 |
US20040823148 |
申请日期 |
2004.04.13 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
LIN CHRONG JUNG;CHEN SHUI-HUNG;CHEN HSIN-MING |
分类号 |
H01L21/28;H01L21/336;H01L21/8247;H01L29/423;H01L29/788;(IPC1-7):G11C11/34 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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