发明名称 CVD APPARATUS FOR FABRICATING IC TO CONTROL POLISHING DEGREE
摘要 PURPOSE: A CVD apparatus for fabricating an IC is provided to control a polishing degree of each part of a wafer by increasing or reducing a standby period of pad strips on the wafer. CONSTITUTION: A plate is used for fixing a semiconductor substrate. A polishing pad(320) includes a plurality of pad strips and is used for pressing the semiconductor substrate. A rotation unit(380) is used for rotating the polishing pad. A migration unit moves straightly a part of the pad strips. The polishing pad is formed with a circular shape. Each pad strip has a shape of a fan. The migration unit includes a motor(370), a screw(360) rotated by the motor, and a rod migrated by the rotation of the screw.
申请公布号 KR20040089150(A) 申请公布日期 2004.10.21
申请号 KR20030022764 申请日期 2003.04.10
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 HONG, CHANG GI;KIM, HO YEONG;LEE, JONG WON
分类号 H01L21/304;B24B37/26;B24B41/04 主分类号 H01L21/304
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