发明名称 |
CVD APPARATUS FOR FABRICATING IC TO CONTROL POLISHING DEGREE |
摘要 |
PURPOSE: A CVD apparatus for fabricating an IC is provided to control a polishing degree of each part of a wafer by increasing or reducing a standby period of pad strips on the wafer. CONSTITUTION: A plate is used for fixing a semiconductor substrate. A polishing pad(320) includes a plurality of pad strips and is used for pressing the semiconductor substrate. A rotation unit(380) is used for rotating the polishing pad. A migration unit moves straightly a part of the pad strips. The polishing pad is formed with a circular shape. Each pad strip has a shape of a fan. The migration unit includes a motor(370), a screw(360) rotated by the motor, and a rod migrated by the rotation of the screw. |
申请公布号 |
KR20040089150(A) |
申请公布日期 |
2004.10.21 |
申请号 |
KR20030022764 |
申请日期 |
2003.04.10 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HONG, CHANG GI;KIM, HO YEONG;LEE, JONG WON |
分类号 |
H01L21/304;B24B37/26;B24B41/04 |
主分类号 |
H01L21/304 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|