| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a modified porous film having excellent hydrophobicity and mechanical strength or to provide a modified porous film which has excellent hydrophobicity and prevents barrier metal diffusion in the use of semiconductor material. <P>SOLUTION: In the method for modifying the porous film, a porous film containing mainly Si-O bond is brought into contact under heating with an organic silicon compound without using metallic catalyst. The organic silicon compound which has two or more Si-A bond units, wherein A denotes H, OH, OC<SB>e</SB>H<SB>2e+1</SB>(e is an integer of 1-6) or halogen atom and a plurality of A in the same molecule are either same or different, and further has one or more Si-X-Si bond units, wherein X denotes O, NR, C<SB>f</SB>H<SB>2f</SB>(f=1 or 2) or C<SB>6</SB>H<SB>4</SB>is used, wherein R denotes C<SB>g</SB>H<SB>2g+1</SB>(g is an integer of 1-6) or C<SB>6</SB>H<SB>5</SB>. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
